ET-AAS DETERMINATION OF TRACE ANALYTES IN HIGH-PURITY BISMUTH AND TELLURIUM OXIDES

Authors
Citation
I. Karadjova, ET-AAS DETERMINATION OF TRACE ANALYTES IN HIGH-PURITY BISMUTH AND TELLURIUM OXIDES, Microchemical journal, 54(2), 1996, pp. 144-153
Citations number
7
Categorie Soggetti
Chemistry Analytical
Journal title
ISSN journal
0026265X
Volume
54
Issue
2
Year of publication
1996
Pages
144 - 153
Database
ISI
SICI code
0026-265X(1996)54:2<144:EDOTAI>2.0.ZU;2-Y
Abstract
Optimal conditions for direct electrothermal atomic absorption (ET-AAS ) determination of Al, Cd, Co, Cr, Cu, Fe, Mn, Ni, Pb, and V in high p urity bismuth oxide and tellurium oxide are described. Matrix interfer ence on the atomization of the analytes is studied. The analytical met hod developed in this paper permits determination of 0.005 mu g g(-1) Cd and Mn; 0.02-0.05 mu g g(-1) Al, Cu, Cr, and Fe; 0.1 mu g g(-1) Co, Ni, and Pb; 0.5 mu g g(-1) V with relative standard deviation 3-8%. ( C) 1996 Academic Press, Inc.