ARCLENGTH CONTINUATION METHODS AND APPLICATIONS TO 2D DRIFT-DIFFUSIONSEMICONDUCTOR EQUATIONS

Shows how a strongly non-linear semiconductor equation can be solved v ia homotopy deformation methods combined with the arclength continuati on procedures. The fundamental goal of these methods is to overcome th e instabilities or the failure of the classical Newton-Raphson's schem es which appear when the non-linearity is strong or near limit or bifu rcation points. The system, in its artificial transient form, is discr etized by the non-linear implicit scheme with local time steps. Uses t he mixed finite element (MFE) approach. Presents numerical results, in two dimension, for a realistic device: an Abrupt Heterojunction Bipol ar Transistor working as an amplifier.