EFFECT OF ION-WAVE DAMPING ON STIMULATED RAMAN-SCATTERING IN HIGH-Z LASER-PRODUCED PLASMAS

Authors
KIRKWOOD RK MACGOWAN BJ MONTGOMERY DS AFEYAN BB KRUER WL MOODY JD ESTABROOK KG BACK CA GLENZER SH BLAIN MA WILLIAMS EA BERGER RL LASINSKI BF
Citation
Rk. Kirkwood et al., EFFECT OF ION-WAVE DAMPING ON STIMULATED RAMAN-SCATTERING IN HIGH-Z LASER-PRODUCED PLASMAS, Physical review letters, 77(13), 1996, pp. 2706-2709
Citations number
27
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
77
Issue
13
Year of publication
1996
Pages
2706 - 2709
Database
ISI
SICI code
0031-9007(1996)77:13<2706:EOIDOS>2.0.ZU;2-U
Abstract
The dependence of the magnitude of stimulated Raman scattering (SRS) o n ion-wave damping has been demonstrated in a high-Z plasma. The ion-w ave damping is varied in a well characterized Xe plasma by varying the concentration of a C5H12 impurity. The reflectivity of SRS is observe d to increase with the concentration of the dopant, demonstrating the effect of ion-wave damping on SRS. The measurements are consistent wit h models in which the amplitude of the SRS-driven Langmuir waves are l imited by a secondary decay into ion-acoustic waves.