PHOTOEMISSION EXTENDED FINE-STRUCTURE STUDY OF THE SIO2 SI(111) INTERFACE/

Authors
SIEGER MT LUH DA MILLER T CHIANG TC
Citation
Mt. Sieger et al., PHOTOEMISSION EXTENDED FINE-STRUCTURE STUDY OF THE SIO2 SI(111) INTERFACE/, Physical review letters, 77(13), 1996, pp. 2758-2761
Citations number
19
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
77
Issue
13
Year of publication
1996
Pages
2758 - 2761
Database
ISI
SICI code
0031-9007(1996)77:13<2758:PEFSOT>2.0.ZU;2-O
Abstract
High-resolution Si 2p core level photoemission spectra of the SiO2/Si( 111) system show chemically shifted components derived from individual oxidation states, which exhibit strong intensity modulations as a fun ction of photon energy due to final-state diffraction. Analysis of the se photoemission intensity modulations gives bond-length information s pecific to the individual suboxide. The results indicate that the inte rface is atomically abrupt.