ELECTRON-PARAMAGNETIC-RESONANCE KNIGHT-SHIFT IN SEMIMAGNETIC (DILUTEDMAGNETIC) SEMICONDUCTORS

Authors
STORY T SWUSTE CHW EGGENKAMP PJT SWAGTEN HJM DEJONGE WJM
Citation
T. Story et al., ELECTRON-PARAMAGNETIC-RESONANCE KNIGHT-SHIFT IN SEMIMAGNETIC (DILUTEDMAGNETIC) SEMICONDUCTORS, Physical review letters, 77(13), 1996, pp. 2802-2805
Citations number
20
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
77
Issue
13
Year of publication
1996
Pages
2802 - 2805
Database
ISI
SICI code
0031-9007(1996)77:13<2802:EKIS(>2.0.ZU;2-U
Abstract
The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+ magnetic moment in PbTe and SnTe semico nducting matrices is experimentally observed and is of different sign for n- and for p-type crystals. The analysis of this effect allows for a straightforward determination of both the sign and the magnitude of the free carrier-local moment exchange integrals for holes and electr ons in PbTe, as well as for light and heavy holes in SnTe.