THERMODYNAMIC-EQUILIBRIUM AND MASS-TRANSPORT COUPLED MODELING OF THE CHEMICAL-VAPOR-DEPOSITION PROCESS

Citation
H. Rouch et al., THERMODYNAMIC-EQUILIBRIUM AND MASS-TRANSPORT COUPLED MODELING OF THE CHEMICAL-VAPOR-DEPOSITION PROCESS, Thin solid films, 282(1-2), 1996, pp. 64-67
Citations number
26
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
282
Issue
1-2
Year of publication
1996
Pages
64 - 67
Database
ISI
SICI code
0040-6090(1996)282:1-2<64:TAMCMO>2.0.ZU;2-T
Abstract
We present a coupled modelling approach involving mass transport and l ocal thermochemical equilibrium in the gas phase and at the deposition surface of the chemical vapour deposition (CVD) process. The theoreti cal problems arising from the combination of the two approaches are sh own and a solution procedure is proposed. Selected results of thermody namic and mass transport analysis and of the coupled approach show tha t, for the deposition of Si1-xGex solid solution at 1300 K, the thermo dynamic heterogeneous stability of the reactive gases and thermal diff usion lead to the depletion of germanium in the deposit.