TIN FILMS PREPARED BY UNBALANCED PLANAR MAGNETRON SPUTTERING UNDER CONTROL OF PHOTOEMISSION OF TI

TiN films have been prepared by unbalanced planar magnetron sputtering , where the flux of sputtered Ti atoms was maintained constant by adju sting N-2 gas flow during sputtering. At a set point of 75% of the Ti signal in pure Ar gas, the film resistivity has a minimum, the film st ress becomes a minimum and the appearance is most gold-like. With an i ncrease in ion bombardment, the internal stress increases, whereas the film resistivity decreases. These results confirm that stoichiometric TiN films are prepared at the set point of 75%, where the target surf ace is not fully covered by TiN. The energetic ions appear to improve the properties of the TiN films.