THE EFFECTS OF OXYGEN-CONTENT ON ELECTRICAL AND OPTICAL-PROPERTIES OFINDIUM TIN OXIDE-FILMS FABRICATED BY REACTIVE SPUTTERING

Authors
HONDA S WATAMORI M OURA K
Citation
S. Honda et al., THE EFFECTS OF OXYGEN-CONTENT ON ELECTRICAL AND OPTICAL-PROPERTIES OFINDIUM TIN OXIDE-FILMS FABRICATED BY REACTIVE SPUTTERING, Thin solid films, 282(1-2), 1996, pp. 206-208
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
282
Issue
1-2
Year of publication
1996
Pages
206 - 208
Database
ISI
SICI code
0040-6090(1996)282:1-2<206:TEOOOE>2.0.ZU;2-M
Abstract
We have investigated the depth profile of the oxygen content of indium tin oxide (ITO) films fabricated by reactive sputtering. The oxygen c ontent was determined by means of O-16(alpha,alpha)O-16 resonant backs cattering. The effect of the oxygen partial pressure of reactive gas o n the oxygen content of the films was investigated. From the depth pro file of oxygen, it was found that the oxygen compositions of the films , especially in the surface region, changed with the oxygen partial pr essure. Also it was found that the electrical and optical properties o f the ITO films changed with the oxygen partial pressure. The correlat ion between the oxygen content and the electrical and optical properti es is discussed.