GROWTH OF MNSB AND MN2SB EPITAXIAL LAYERS ON GAAS SUBSTRATES BY HOT-WALL EPITAXY

MnSb and MnSb-Mn2Sb mixed layers were grown on GaAs(100), (111)A and ( 111)B substrates by hot-wall epitaxy under various growth conditions. It was found that Sb/Mn flux ratio affected the orientation of MnSb la yers grown on GaAs( 100). The crystalline quality of MnSb layers grown on GaAs(111) depends on the growth conditions, such as substrate temp erature, Sb/Mn Aux ratio and substrate polarity. The crystalline quali ty of the layers on GaAs(111)B was superior to that of the layers on G aAs(111)A. The quality of the layers on GaAs(111)B, however, was steep ly degraded as increasing Sb/Mn flux ratio. The Mn2Sb domains were gen erated in the layers grown on GaAs(111) substrates at high substrate t emperature.