THE INFLUENCE OF BI-STICKING COEFFICIENT IN THE GROWTH OF BI(2212) THIN-FILM BY ION-BEAM SPUTTERING

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering method with an ultra-low growth rate, and sticking coe fficients of the respective elements are evaluated. The sticking coeff icient of Bi element exhibits a characteristic temperature dependence; almost a constant value of 0.49 below 730 degrees C and decreases lin early with temperature over 730 degrees C. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismu th oxide, Bi2O3, from the film surface. It is considered that the liqu id phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.