We intend to use diamond film as sensors for pressure, strain and acce
leration. For this purpose, a new process was developed to produce a b
ridge structure of diamond film using sacrificial layer etching and se
lective growth by ion implantation. The size of the bridge made by thi
s process is 240 X 420 mu m(2) and the thickness is about 3.5 mu m Ben
ding displacement of the bridge under various loads between 1 mgf and
40 mgf is studied. The maximum displacement is proportional to the loa
d and is about 0.2 mu m at 40 mgf loading. As a result, Young's modulu
s of the diamond film is estimated to be about 1000 GPa.