PRODUCTION OF A BRIDGE STRUCTURE USING DIAMOND FILM

Citation
K. Hoshikawa et al., PRODUCTION OF A BRIDGE STRUCTURE USING DIAMOND FILM, Thin solid films, 282(1-2), 1996, pp. 545-547
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
282
Issue
1-2
Year of publication
1996
Pages
545 - 547
Database
ISI
SICI code
0040-6090(1996)282:1-2<545:POABSU>2.0.ZU;2-K
Abstract
We intend to use diamond film as sensors for pressure, strain and acce leration. For this purpose, a new process was developed to produce a b ridge structure of diamond film using sacrificial layer etching and se lective growth by ion implantation. The size of the bridge made by thi s process is 240 X 420 mu m(2) and the thickness is about 3.5 mu m Ben ding displacement of the bridge under various loads between 1 mgf and 40 mgf is studied. The maximum displacement is proportional to the loa d and is about 0.2 mu m at 40 mgf loading. As a result, Young's modulu s of the diamond film is estimated to be about 1000 GPa.