NANOFABRICATION ON N-GAAS SURFACE USING A SCANNING TUNNELING MICROSCOPE IN A NI-SALT SOLUTION

We have demonstrated that an etched feature as small as 10X10 nm was r ealized on n-GaAs surfaces in a Ni-salt solution by using a scanning t unnelling microscope (STM). Injected carriers from the tip were respon sible for the local anodic etching. in the same solution, we deposited a micron-size Ni island on n-GaAs. An electric held between the tip a nd the substrate induced the local Ni deposition.