INFRARED-ABSORPTION IN SILICON FROM SHALLOW THERMAL DONORS INCORPORATING HYDROGEN AND A LINK TO THE NL10 PARAMAGNETIC-RESONANCE SPECTRUM

Citation
Rc. Newman et al., INFRARED-ABSORPTION IN SILICON FROM SHALLOW THERMAL DONORS INCORPORATING HYDROGEN AND A LINK TO THE NL10 PARAMAGNETIC-RESONANCE SPECTRUM, Physical review. B, Condensed matter, 54(10), 1996, pp. 6803-6806
Citations number
32
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
54
Issue
10
Year of publication
1996
Pages
6803 - 6806
Database
ISI
SICI code
0163-1829(1996)54:10<6803:IISFST>2.0.ZU;2-P
Abstract
Shallow thermal donors (STDs), generated in Czochralski silicon, annea led at 470 degrees C in a hydrogen plasma, and detected by their infra red (IR) electronic absorption, have ground states that shift slightly (similar to 0.1 cm(-1)) to smaller binding energies, when deuterium i s introduced instead of hydrogen, demonstrating the presence of a hydr ogen atom in the donor core. No other IR spectrum is detected apart fr om that from neutral double thermal donors (TDs). The same optical tra nsitions are observed in three annealed samples given a preheat treatm ent in water vapor. These latter samples show the NL10 electron-parama gnetic-resonance (EPR) spectrum, recently attributed to hydrogen passi vated TDs. The relative strengths of the EPR NL10 spectra correlate wi th those of the STD IR spectra, providing a strong indication that bot h spectra arise from the same defects.