VARIATION OF THE INPLANE PENETRATION DEPTH LAMBDA(AB) AS A FUNCTION OF DOPING IN LA2-XSRXCUO4+ -DELTA THIN-FILMS ON SRTIO3 - IMPLICATIONS FOR THE OVERDOPED STATE/

Normal-state properties, such as the resistivity rho(ab) and the Hall coefficient R(H), structural properties, such as the c axis and in-pla ne lattice parameters, and superconductive properties, such as the cri tical temperature T-c, the penetration depth lambda(ab), and the therm al activation energy for flux flow Delta U, are reported for c-axis La 2-xSrxCuO4+/-delta films. These parameters have been measured as a fun ction of doping in the range from heavily underdoped to heavily overdo ped. The structural data indicate a 0.3% compression of the c-axis par ameter and a corresponding 0.3% expansion of the in-plane lattice para meters as compared to bulk values, which explains the overall reduced critical temperature of these thin films. As the dopant content is inc reased, maximum values for T-c, Delta U, and lambda(ab)(-1) are observ ed close to optimum doping, while R(H) and rho(ab) decrease monotonica lly.