CHARACTERIZATION OF CARBON NITRIDE FILMS MODIFIED BY LOW-ENERGY ION-BEAM BOMBARDMENT

Based on our previous synthesis of carbon nitride films containing bet a-C3N4 polycrystal grains, post-treatment of these deposited films usi ng low-energy nitrogen ion-beam bombardment was carried out in order t o improve the concentration of beta-C3N4 structures in the films. Tran smission electron microscopy (TEM) and electron diffraction (ED) measu rements showed that the fraction of crystal carbon nitride structure i n the films has been improved after such a treatment. X-ray photoelect ron spectroscopy (XPS) and Raman analyses confirmed the improvement of the fraction of carbon nitride bonding structures in the modified fil ms. The fractions of amorphous carbon and graphite-like carbon in the films were decreased after the bombardment.