STUDY OF THE OXYGEN BEHAVIOR IN THERMALLY TREATED CZOCHRALSKI SILICONBY COMBINING CPAA WITH ION CHANNELING

Authors
ERRAMLI H MISDAQ MA BLONDIAUX G MADDALONVINANTE C BARBIER D
Citation
H. Erramli et al., STUDY OF THE OXYGEN BEHAVIOR IN THERMALLY TREATED CZOCHRALSKI SILICONBY COMBINING CPAA WITH ION CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(3), 1996, pp. 283-288
Citations number
22
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
117
Issue
3
Year of publication
1996
Pages
283 - 288
Database
ISI
SICI code
0168-583X(1996)117:3<283:SOTOBI>2.0.ZU;2-#
Abstract
Non-doped Czochralski grown silicon substrates for microelectronic dev ices contain relatively high oxygen concentrations (5 X 10(17)-10(18) atoms/cm(3)). Reduction of the oxygen content near the crystal surface is obtained by internal gettering treatments. Ion channeling and char ged particle activation analysis (CPAA) were combined to determine the concentration and position of oxygen atoms in the silicon lattice. Th e influence of the internal gettering treatment parameters on concentr ation and position of oxygen atoms in the silicon lattice has been inv estigated. The O-16(He-3,p)F-18 nuclear reaction was used and the F yi eld was measured by direct gamma-ray spectrometry.