GROWTH MODE OF AU LAYER ON SI(001)

Authors
KIM KS KIM YW PARK NG CHO WS CHOI DS KIM SS WHANG CN
Citation
Ks. Kim et al., GROWTH MODE OF AU LAYER ON SI(001), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(3), 1996, pp. 289-294
Citations number
22
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
117
Issue
3
Year of publication
1996
Pages
289 - 294
Database
ISI
SICI code
0168-583X(1996)117:3<289:GMOALO>2.0.ZU;2-U
Abstract
We investigated the annealing effect on the behavior of Au atoms on th e Si(001) surface using coaxial impact collision ion scattering spectr oscopy. We found that the growth mode of Au atoms on Si(001) at room t emperature is layer by layer growth, whereas Au atoms on Si(001) are t ransformed into three dimensional islands above 400 degrees C. We foun d that the structure of the Au islands is a crystalline {001} orientat ion with the [110] direction aligned with a [100] direction in the sub strate. The crystalline portion of the islands is about 42% of the top two atomic layers.