Vm. Garcia et al., CDSE-IN-IN2O3 COATING WITH N-TYPE CONDUCTIVITY PRODUCED BY AIR ANNEALING OF CDSE-IN THIN-FILMS, Journal of the Electrochemical Society, 143(9), 1996, pp. 2892-2895
Conversion of chemically deposited intrinsic CdSe thin films to n-type
coatings by a postdeposition process is described. A Cd:Se-In thin fi
lm consisting of a CdSe thin film similar to 0.15 mu m thick and a the
rmally evaporated indium film similar to 0.02 mu m thick was air annea
led at 325 degrees C for 1 h. The resulting thin film coating of CdSe:
In (0.15 mu m)-In2O3 (0.03 mu m) exhibits a sheet resistance of 790 Om
ega/square and an n-type conductivity of similar to 400 Omega(-1) cm f
or the In2O3 top layer. Etching of the film with 1 M HCl for 6 h remov
es the superficial In2O3 from the coating, and the underlying CdSe wit
h indium doping shows a sheet resistance of 15 k Omega/square which co
rresponds to electrical. conductivity (n-type) of similar to 0.4 Omega
(-1) cm(-1). The composition of the film and its variation along the d
epth are established through analyses of x-ray diffraction pattern and
xray fluorescence spectra as well as the photocurrent response of the
annealed films recorded before and after chemical etching.