CHARACTERIZATION OF SOLUTION DERIVED RUO2 ELECTRODES FOR PB(ZR,TI)O-3MICROCAPACITORS

High Pr(20 mu C/cm(2)) Pb(Zr, Ti)O-3/RuO2 multilayer thin films were f abricated on (100) Si substrates by a spin-on technique. The grain str ucture and the resistivities of the RuO2 films were found to be relate d to each other, with both properties being controlled by the firing s chedules of the films. The crystallinity of the Pb(Zr, Ti)O-3 films we re seriously influenced by the surface morphology of the RuO2/Si subst rates. The best crystalline Pb(Zr, Ti)O-3 films occurred when the subs trate was RuO2 with root mean square roughness of 8 nm. An optimized P b(Zr, Ti)O-3 capacitor with an RuO2 film as a bottom electrode showed good fatigue property.