STRUCTURAL AND COMPOSITIONAL CHARACTERIZATION OF HIGH-ENERGY SEPARATION BY IMPLANTATION OF OXYGEN STRUCTURES USING INFRARED-SPECTROSCOPY

Silicon was implanted with 2 MeV O+ ions with doses covering the range from 1 x 10(17) to 2 x 10(18) O+ cm(-2), at an implantation temperatu re of 700 degrees C. Subsequently, samples were capped and annealed at 1300 degrees C. Infrared reflectance spectroscopy has been used in or der to characterize the as-implanted and annealed samples. The optical modeling of the multilayer structures and the data reduction procedur e are given in detail. The thickness, chemical composition, crystallin ity, interface macroscopic roughness, and refractive index profiles ar e quantified. It is shown that infrared reflectance spectroscopy is a quick, nondestructive, analytical, and precise method for characterizi ng high energy separation by implantation of oxygen (SIMOX) structures . Cross correlation with H+ beam Rutherford backscattering/channeling, secondary ion mass spectroscopy, and cross-sectional transmission ele ctron microscopy results, gives good agreement. The formation of oxide in the high energy region follows the same basic rules as in the stan dard SIMOX case. No anomalous oxygen diffusion was observed during ann ealing and a buried layer formed during annealing even for the lowest dose. It is found that the microstructure of the annealed samples is s trongly dependent on the implantation conditions such as beam current density and that even for the highest dose of 2 x 10(18) O+ cm(-2), a continuous stoichiometric silicon dioxide layer has not formed after a nnealing.