The field emission cathodes investigated in this paper are based on ti
ps or wedges structures. Fabricated on a highly doped GaAs substrate,
these devices give maximum current values of 100 mu A under low voltag
e, both for tips and wedges. Two methods are used to Jit the I-V chara
cteristics. The emission field uniformity seems to be improved in case
of wedge structures, particularly after a << self-shaping >> period o
f time. Although the geometry appears theoretically less favourable, t
he experimental results support the expected advantages of wedge struc
tures for microwave modulation of the emission current : a low gate vo
ltage, a reduced current density, a good thermal behavior.