SPIN-FLIP TUNNELING BETWEEN QUANTUM-WELLS WITH A SEMIMAGNETIC BARRIER

Non-resonant tunnelling transitions between quantum wells accompanied by spin-dependent exchange scattering of the electron are considered t heoretically for structures consisting of two semiconductor quantum we lls separated by a semimagnetic barrier. The transitions both with and without spin flip are shown to be equally important for the transvers e current in an electric field. The contribution due to spin-flip scat tering gives rise to an additional step in the voltage-current charact eristics when a magnetic field is applied.