EXCIMER-LASER ASSISTED SPIN-ON DOPING OF BORON INTO SILICON

n-type silicon wafers were doped by boron using a spin-on doping metho d. A XeCl pulsed excimer laser (lambda = 308 nm) was used to irradiate the sample at room temperature. Properties such as sheet resistance, carrier concentration profile, Hall mobility and structural defects we re then determined. The results show that the sheet resistance decreas es with an increase of laser fluence as well as with an increase in pu lse number. It attains a low value of 10(2) Omega square(-1) for laser fluence above 1.0 J cm(-2). An optimal doping profile with surface ca rrier concentration of 10(18) cm(-3) and a junction depth of 0.36 mu m was achieved by 25 pulses of 1.5 J cm(-2) irradiation. Channelled Rut herford backscattering spectroscopy showed that no obvious lattice dam age exists in the doped Si wafer.