A NOVEL BACK-CONTACTING TECHNOLOGY FOR CUINSE2 THIN-FILMS

Authors
GHOSH B CHAKRABORTY DP CARTER MJ
Citation
B. Ghosh et al., A NOVEL BACK-CONTACTING TECHNOLOGY FOR CUINSE2 THIN-FILMS, Semiconductor science and technology, 11(9), 1996, pp. 1358-1362
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
9
Year of publication
1996
Pages
1358 - 1362
Database
ISI
SICI code
0268-1242(1996)11:9<1358:ANBTFC>2.0.ZU;2-I
Abstract
The standard method for back contacting to copper indium diselenide so lar cells uses rf sputtered or e-beam evaporated molybdenum on a glass substrate. These processes are costly with a high energy input. A new simple technique has been proposed for the electroless deposition of a nickel-molybdenum alloy on chromium-coated glass substrates. This te chnique can also be applied directly to copper indium diselenide for a backwall cell configuration. Improved mechanical and electrical perfo rmances for this technique are reported.