DETERMINATION OF THE CRITICAL THICKNESS OF MISFIT DISLOCATION MULTIPLICATION USING IN-SITU DOUBLE-CRYSTAL X-RAY-DIFFRACTION (VOL 11, PG 1051, 1996)

MOCK P TANNER BK LI CR KEIR AM JOHNSON AD LACEY G CLARK GF LUNN B HOGG JCH

P. Mock et al., DETERMINATION OF THE CRITICAL THICKNESS OF MISFIT DISLOCATION MULTIPLICATION USING IN-SITU DOUBLE-CRYSTAL X-RAY-DIFFRACTION (VOL 11, PG 1051, 1996), Semiconductor science and technology, 11(9), 1996, pp. 1363-1363

1

Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science

Semiconductor science and technology → ACNP

02681242

11

9

1996

1363 - 1363

ISI

0268-1242(1996)11:9<1363:DOTCTO>2.0.ZU;2-Y