Vertical-cavity surface-emitting lasers (VCSEL's) were grown by metalo
rganic vapor phase epitaxy, Excellent uniformity of Fabry-Perot cavity
wavelength for VCSEL materials of +/-0.2% across a 3-in diameter wafe
r was achieved, This results in excellent uniformity of the lasing wav
elength and threshold current of VCSEL devices. Employing pregrowth ca
librations on growth rates periodically with an ill situ reflectometer
, we obtained a run-to-run wavelength reproducibility for 770- and 850
-nm VCSEL's of +/-0.3% over the course of more than a hundred runs.