HIGH-EFFICIENCY ALGAAS-BASED LASER-DIODE AT 808 NM WITH LARGE TRANSVERSE SPOT SIZE

Authors
EMANUEL MA CARLSON NW SKIDMORE JA
Citation
Ma. Emanuel et al., HIGH-EFFICIENCY ALGAAS-BASED LASER-DIODE AT 808 NM WITH LARGE TRANSVERSE SPOT SIZE, IEEE photonics technology letters, 8(10), 1996, pp. 1291-1293
Citations number
15
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
8
Issue
10
Year of publication
1996
Pages
1291 - 1293
Database
ISI
SICI code
1041-1135(1996)8:10<1291:HALA8N>2.0.ZU;2-O
Abstract
Lasers diodes having a large transverse spot size have been fabricated from a modified graded index separate confinement heterostructure wit h an active region consisting of two 70 Angstrom Al0.15In0.10Ga0.75As strained quantum wells, The catastrophic optical damage threshold for these large transverse mode devices is increased by more than two time s over that of conventional devices while still maintaining good devic e performance.