CARRIER CAPTURE AND ESCAPE TIMES IN IN0.35GA0.65AS-GAAS MULTI-QUANTUM-WELL LASERS DETERMINED FROM HIGH-FREQUENCY ELECTRICAL-IMPEDANCE MEASUREMENTS

We present experimental results on the high-frequency electrical imped ance of In0.35Ga0.65As-GaAs multiquantum-well lasers with varied p-dop ing levels in the active region, The analysis of the data, using a sim ple three rate equation model, provides information about the dynamica l time constants (the carrier lifetime, the effective carrier capture and escape times) under the laser operation conditions, The addition o f p-doping increases the carrier escape time at threshold from 0.7 ns, extracted for the undoped devices, up to a value higher than 2 ns for the p-doped lasers, The effective capture time is estimated to be bet ween 2 and 5 ps.