REDUCED TURN-ON DELAY-TIME IN 1.3-MU-M INGAASP-INP N-TYPE MODULATION-DOPED STRAINED MULTI-QUANTUM-WELL LASERS WITH A BURIED HETEROSTRUCTURE

Authors
NAKAHARA K UOMI K HAGA T TANIWATARI T OISHI A
Citation
K. Nakahara et al., REDUCED TURN-ON DELAY-TIME IN 1.3-MU-M INGAASP-INP N-TYPE MODULATION-DOPED STRAINED MULTI-QUANTUM-WELL LASERS WITH A BURIED HETEROSTRUCTURE, IEEE photonics technology letters, 8(10), 1996, pp. 1297-1298
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
8
Issue
10
Year of publication
1996
Pages
1297 - 1298
Database
ISI
SICI code
1041-1135(1996)8:10<1297:RTDI1I>2.0.ZU;2-V
Abstract
A reduction in both the threshold current and carrier lifetime is demo nstrated, for the first time, in an n-type modulation-doped InGaAsP st rained multiquantum well laser with a buried heterostructure. Threshol d current and carrier lifetime is reduced by 10% and 15%, respectively , as compared with a undoped MQW laser, which results in a 35% decreas e in the turn-on delay time, This confirms the suitability of this typ e of laser for use as a light source for high-density parallel optical interconnection.