SIZE-SELECTIVE MEASUREMENTS OF SILICON-CLUSTER POLARIZABILITIES BY A CLUSTER-BEAM DEFLECTION TECHNIQUE

Citation
J. Woenckhaus et al., SIZE-SELECTIVE MEASUREMENTS OF SILICON-CLUSTER POLARIZABILITIES BY A CLUSTER-BEAM DEFLECTION TECHNIQUE, Surface review and letters, 3(1), 1996, pp. 371-375
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Physics, Atomic, Molecular & Chemical","Material Science
Journal title
ISSN journal
0218625X
Volume
3
Issue
1
Year of publication
1996
Pages
371 - 375
Database
ISI
SICI code
0218-625X(1996)3:1<371:SMOSPB>2.0.ZU;2-B
Abstract
Average static electric polarizabilities of small and middle silicon-c luster size ranges have been measured employing a mass-selective molec ular beam deflection method. The largest studied clusters contained N = 60 atoms of silicon. The polarizabilities of the semiconductor clust ers are compared to the results obtained for metal clusters. Especiall y, the measurements of the midsized semiconductor clusters Si-30-Si-45 are discussed with regard to the predicted spherical cage-like struct ures which have been recently by Rothlisberger et al.(1) The results f or the larger clusters are analyzed in terms of recent experiments of photoluminescence of small silicon nanocrystallites.(2)