A QUANTUM-SPONGE MODEL FOR POROUS SILICON

Authors
SAWADA S OOKUBO N
Citation
S. Sawada et N. Ookubo, A QUANTUM-SPONGE MODEL FOR POROUS SILICON, Surface review and letters, 3(1), 1996, pp. 1157-1161
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Physics, Atomic, Molecular & Chemical","Material Science
Journal title
Surface review and letters → ACNP
ISSN journal
0218625X
Volume
3
Issue
1
Year of publication
1996
Pages
1157 - 1161
Database
ISI
SICI code
0218-625X(1996)3:1<1157:AQMFPS>2.0.ZU;2-C
Abstract
We propose a ''quantum-sponge'' model for porous silicon. This model e xhibits energy-gap widening and nonexponential decay of photoluminesce nce describable by the stretched exponential function. These propertie s are in good agreement with those observed for porous silicon. We sug gest that the fractal character of its wave functions is the origin of the nonexponential decay of photoluminescence.