THEORETICAL-STUDY OF THE TEMPERATURE-DEPENDENCE OF 1.3-MU-M ALGAINAS-INP MULTIPLE-QUANTUM-WELL LASERS

The temperature dependence of the differential gain, carrier density, and transparency current density for 1.3-mu m Al-GaInAs-InP multiple-q uantum-well lasers has been theoretically studied using the optical ga in calculation from 250-380 K. The characteristic temperatures of the carrier density and differential gain at threshold are calculated to b e 254 and 206 K, respectively, The Auger current density accounts for more than 50% of the total current density, The leakage current densit y exhibits the highest temperature sensitivity and becomes an essentia l part of the total current density at a high temperature. The calcula ted characteristic temperatures of the transparency and threshold curr ent densities are 106 and 84 K, respectively, which agree well with th e reported experimental results.