BINDING-ENERGY OF A POLARON IN ASYMMETRIC POLAR SEMICONDUCTOR HETEROSTRUCTURES

Citation
Zj. Wang et al., BINDING-ENERGY OF A POLARON IN ASYMMETRIC POLAR SEMICONDUCTOR HETEROSTRUCTURES, Superlattices and microstructures, 20(2), 1996, pp. 193-202
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
07496036
Volume
20
Issue
2
Year of publication
1996
Pages
193 - 202
Database
ISI
SICI code
0749-6036(1996)20:2<193:BOAPIA>2.0.ZU;2-3
Abstract
By using a modified Lee-Low-Pines variational method, we have investig ated the groundstate binding energy of a polaron confined in asymmetri c single and step quantum wells (QWs) due to interface phonons, confin ed bulk-like LO phonons, and half-space LO phonons. The relative impor tance of the different phonon modes is analysed in detail. Our results show that the asymmetry and the well width of the QWs have a signific ant influence on the polaron energy. The polaron binding energy has an intimate relation to the potential parameters of QWs. The subband non parabolicity has a little influence to the polaron binding energy. Com paring with the results calculated with perturbation theory, a good ag reement is found. (C) 1996 Academic Press Limited