FINITE CONFINING EFFECT ON ELECTRON-PHONON INTERACTION IN GAAS GA1-XALXAS SINGLE HETEROSTRUCTURES/

The form factors of the electron-phonon interaction for GaAs/Ga1-xAlxA s single heterostructures have been evaluated using a finite height ba rrier. The calculations are performed within the extreme quantum limit approximation, assuming for the envelope electronic wavefunction a mo dified Fang-Howard wavefunction. Both types of long-wave phonons, long itudinal optical and interface phonons, are considered. It is found th at the effect of the finite height is to reduce the strength of the el ectron-phonon interaction. (C) 1996 Academic Press Limited