POLARIZATION DEPENDENCE OF INTERSUBBAND ABSORPTION AND PHOTOCONDUCTIVITY IN P-TYPE SIGE QUANTUM-WELLS

Authors
FROMHERZ T KRUCK P HELM M BAUER G NUTZEL JF ABSTREITER G
Citation
T. Fromherz et al., POLARIZATION DEPENDENCE OF INTERSUBBAND ABSORPTION AND PHOTOCONDUCTIVITY IN P-TYPE SIGE QUANTUM-WELLS, Superlattices and microstructures, 20(2), 1996, pp. 237-243
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
20
Issue
2
Year of publication
1996
Pages
237 - 243
Database
ISI
SICI code
0749-6036(1996)20:2<237:PDOIAA>2.0.ZU;2-D
Abstract
We present a detailed study of the polarization dependence of subband absorption and photoconductivity in Si/SiGe quantum wells. For samples with a hole concentration of p(s) = 2.8 x 10(12) cm(-2), both p- and s-polarized absorptions have been observed and transitions to several excited states are clearly identified by comparison with self-consiste nt Luttinger-Kohn type calculations. The photoconductivity is surprisi ngly insensitive to the polarization, which indicates the importance o f the subsequent transport process on the photocurrent responsitivity. (C) 1996 Academic Press Limited