SECONDARY-ELECTRON EMISSION COEFFICIENT OF C-H AND SI-C THIN-FILMS AND SOME RELATIONS TO THEIR MORPHOLOGY AND COMPOSITION

A complex investigation of the secondary electron emission coefficient (SEEC) of two types of carbon containing thin fr-m materials, which a re among potential candidates for anti-multi-pactoring (AMP) coatings in high frequency devices, such as HF waveguides used for plasma heati ng in fusion experiments, has been performed. Relations between the de pendencies of the SEEC on the energy E and the angle of incidence of t he primary electron beam theta and other thin him characteristics such as morphology, composition and thermal stability have been establishe d. As a result, the conditions for plasma enhanced chemical vapor depo sition of thermally stable C:H films with a SEEC<1 were determined. In addition, it was found that the Si:C films obtained by d.c. magnetron co-sputtering have, for all investigated energies E and angles theta, before and after annealing, a SEEC very close to unity and are intere sting new candidates for AMP-coatings.