TEM AND PEELS CHARACTERIZATION OF DIAMOND FILMS GROWN ON SI SUBSTRATES

A detailed cross-sectional analysis at the interface of a polycrystall ine diamond film and a crystalline silicon substrate was performed usi ng high resolution electron microscopy (HRTEM) and electron energy los s spectroscopy (EELS). Using the method described here, we can produce diamond films on non-scratched Si substrates by hot filament CVD (wit h the help of a SIC buffer layer). The size of the particles produced is in the range from 0.5 to 1.0 mu m An orientation relationship betwe en the diamond particles and the SiC buffer layer is also found. Final ly, it seems clear that a K-edge EELS spectrum is sufficient to distin guish amorphous carbon, graphite or diamond.