NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS

Authors
ALKAN B
Citation
B. Alkan, NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(7), 1996, pp. 885-888
Citations number
10
Categorie Soggetti
Physics
Journal title
Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics → ACNP
ISSN journal
03926737
Volume
18
Issue
7
Year of publication
1996
Pages
885 - 888
Database
ISI
SICI code
0392-6737(1996)18:7<885:NISIS>2.0.ZU;2-B
Abstract
Applying the correlation function technique, a temperature-independent mobility mu(n) has been obtained and it is shown that this mu(n) rema ins close to the experimental mobility of n-type Ge around 10 K.