INTERDIGITATED HETERO INGAAS GAAS N-I-P-I MODULATORS/

Authors
TSENG WF CHANDLERHOROWITZ D PAPANICOLAOU NA BOOS JB
Citation
Wf. Tseng et al., INTERDIGITATED HETERO INGAAS GAAS N-I-P-I MODULATORS/, Materials letters, 29(4-6), 1996, pp. 249-253
Citations number
13
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
29
Issue
4-6
Year of publication
1996
Pages
249 - 253
Database
ISI
SICI code
0167-577X(1996)29:4-6<249:IHIGNM>2.0.ZU;2-5
Abstract
Interdigitated hetero InGaAs n-i-p-i InGaAs/GaAs modulators have been grown and fabricated by a shadow mask technique for selectively making contacts to n-and p-layers. Manipulations of exciton peak positions a nd intensities by external electrical bias and incident optical power have been demonstrated.