FABRICATION OF FERROELECTRIC PZT THIN-FILM CAPACITORS WITH INDIUM TINOXIDE (ITO) ELECTRODES

Authors
RAO AV MANSOUR SA BEMENT AL
Citation
Av. Rao et al., FABRICATION OF FERROELECTRIC PZT THIN-FILM CAPACITORS WITH INDIUM TINOXIDE (ITO) ELECTRODES, Materials letters, 29(4-6), 1996, pp. 255-258
Citations number
11
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
29
Issue
4-6
Year of publication
1996
Pages
255 - 258
Database
ISI
SICI code
0167-577X(1996)29:4-6<255:FOFPTC>2.0.ZU;2-P
Abstract
Conductive metal oxide contacts were used in the fabrication of fatigu e-resistant lead zirconate titanate (PZT) capacitors. The successful f abrication and characterization of PZT thin-film capacitors with trans parent conducting indium tin oxide (ITO) contacts using a combination of metallo-organic decomposition (MOD) and rf-sputtering are described . High remnant polarization, improved fatigue resistance, and a leakag e current density of 10(-4) A/cm(2) were found in ITO-PZT-ITO capacito rs.