Av. Rao et al., FABRICATION OF FERROELECTRIC PZT THIN-FILM CAPACITORS WITH INDIUM TINOXIDE (ITO) ELECTRODES, Materials letters, 29(4-6), 1996, pp. 255-258
Conductive metal oxide contacts were used in the fabrication of fatigu
e-resistant lead zirconate titanate (PZT) capacitors. The successful f
abrication and characterization of PZT thin-film capacitors with trans
parent conducting indium tin oxide (ITO) contacts using a combination
of metallo-organic decomposition (MOD) and rf-sputtering are described
. High remnant polarization, improved fatigue resistance, and a leakag
e current density of 10(-4) A/cm(2) were found in ITO-PZT-ITO capacito
rs.