SIZE DEPENDENCE OF ELECTRICAL-RESISTIVITY 1D-LAYERED NANOSTRUCTURES

The Landauer electrical resistivity R of one-dimensional (1D) layered nanostructures is calculated. The analysis of the logarithm of the res istance as a function of grain size reveals that there is a minimum va lue of resistivity R(min) when the grain size takes a value of d(c), w here d(c) depends on the barrier height and excess volume of interface . R increases in the region of d(cl) > d > d(c), where d is the grain size, and d(cl) is another critical value of grain size. The mechanism of the anomalous resistivity behavior is discussed briefly.