PROCESSING AND CHARACTERIZATION OF PECVD SILICON-NITRIDE FILMS

Authors
ZHANG XM DING KB YANG AL SHAO DL
Citation
Xm. Zhang et al., PROCESSING AND CHARACTERIZATION OF PECVD SILICON-NITRIDE FILMS, Advanced materials for optics and electronics, 6(3), 1996, pp. 147-150
Citations number
9
Categorie Soggetti
Material Science",Optics,"Engineering, Eletrical & Electronic",Chemistry
Journal title
Advanced materials for optics and electronics → ACNP
ISSN journal
10579257
Volume
6
Issue
3
Year of publication
1996
Pages
147 - 150
Database
ISI
SICI code
1057-9257(1996)6:3<147:PACOPS>2.0.ZU;2-C
Abstract
Amorphous Si-N films are synthesised from an NH3/SiH4 gas mixture by p lasma-enhanced chemical vapour deposition (PECVD) at fixed radio frequ ency (13.56 MHz) and total gas pressure (34+/-4 Torr). The variable pr ocess parameters and their ranges are: (i) substrate temperature, 200- 400 degrees C; (ii) RF power density, 0.08-0.35 W cm(-2); (iii) NH3/Si H4 flow ratio, 40:400-40: 1200 ml min(-1). Fundamental properties of t he Si-N films are characterised through elemental composition, chemica l speciation, optical and electrical properties, all of which are depe ndent on the process parameters.