EPITAXIAL-GROWTH OF CUINS2 ON SULFUR TERMINATED SI(111)

We demonstrate the direct heteroepitaxial growth of the chalcopyrite s emiconductor CuInS2 on silicon (III) substrates by means of three-sour ce molecular beam epitaxy. The pretreatment of the silicon wafers incl udes sulphur termination which leads to a new surface structure defini ng the starring condition for successful epitaxy. All stages of the gr owth process were controlled in situ using Auger electron spectroscopy and low energy electron diffraction. Furthermore, the epitaxial layer s were characterized by means of x-ray diffraction methods and by Ruth erford backscattering spectrometry including channeling. X-ray rocking curves showed a typical width of 0.2 degrees while the minimum yield due to the channeling effect was found to be 56%. (C) 1996 American In stitute of Physics.