FIRST-ORDER GAIN-COUPLED GAINAS GAAS DISTRIBUTED-FEEDBACK LASER-DIODES PATTERNED BY FOCUSED ION-BEAM IMPLANTATION/

Authors
ORTH A REITHMAIER JP ZEH R DOLESCHEL H FORCHEL A
Citation
A. Orth et al., FIRST-ORDER GAIN-COUPLED GAINAS GAAS DISTRIBUTED-FEEDBACK LASER-DIODES PATTERNED BY FOCUSED ION-BEAM IMPLANTATION/, Applied physics letters, 69(13), 1996, pp. 1906-1908
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
13
Year of publication
1996
Pages
1906 - 1908
Database
ISI
SICI code
0003-6951(1996)69:13<1906:FGGGDL>2.0.ZU;2-V
Abstract
Electrically pumped gain-coupled distributed feedback lasers with firs t order gratings have been fabricated on a (Ga,In)As/(Al,Ga)As separat e confinement heterostructure by focused ion beam implantation and epi taxial overgrowth. The lasers are operating at room temperature at wav elengths around 950 nm. All investigated devices show single longitudi nal mode emission at all operating conditions. (C) 1996 American Insti tute of Physics.