FUNCTIONAL INP INGAAS LATERAL DOUBLE-BARRIER HETEROSTRUCTURE RESONANT-TUNNELING DIODES BY USING ETCH AND REGROWTH/

A planar integrated lateral double barrier heterostructure resonant tu nneling diode is demonstrated, Resonances in the current-voltage (I-V) characteristics are observed that have peak-to-valley current ratios as high as 3.5 at 4.2 K and are attributed to resonant tunneling in a two-dimensional/one-dimensional/two-dimensional system. The device str ucture consists of a lateral double barrier heterostructure embedded i n an InP/InGaAs/InP modulation-doped field-effect transistor structure . The lateral heterostructure uses InP barriers and an InGaAs quantum well fabricated by epitaxial etch and regrowth techniques. This device and fabrication process forms the basis for lateral resonant tunnelin g transistors. (C) 1996 American Institute of Physics.