OFFSET OF THE ELECTRICAL CHARACTERISTICS OF ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES

Citation
S. Shih et al., OFFSET OF THE ELECTRICAL CHARACTERISTICS OF ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES, Applied physics letters, 69(13), 1996, pp. 1921-1923
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
13
Year of publication
1996
Pages
1921 - 1923
Database
ISI
SICI code
0003-6951(1996)69:13<1921:OOTECO>2.0.ZU;2-J
Abstract
Offset is observed in the charge-voltage (Q-V) or internal charge-phos phor field (Q-F-p) characteristics of certain alternating-current thin -film electroluminescent (ACTFEL)devices. This offset arises from a di splacement along the voltage axis of a transient curve measured across a sense capacitor in the electrical characterization setup. A procedu re for adjusting this offset is proposed that allows ACTFEL devices ma nifesting offset to be meaningfully analyzed. Two possible sources of offset are deduced from simulation and are associated with an asymmetr y in the interface state energy depths at the two phosphor-insulator i nterfaces or with an asymmetry in the location of space charge generat ion in the phosphor. (C) 1996 American Institute of Physics.