FAR-INFRARED STUDY OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS FORMED ON (100)GAAS FACETS WITH HOLE GAS SIDEGATES ON A (311)A GAAS SUBSTRATE

A new type of quasi-one-dimensional electron gas has been realized by using molecular beam epitaxy to grow a high mobility heterostructure o n a (311)A GaAs substrate selectively etched to expose (100) facets. T he electron gas formed on the (100) facets is confined in one lateral dimension by the p-n junctions formed with the adjacent two-dimensiona l hole gases on (311)A, thereby forming a p-n-p structure. Far-infrare d cyclotron resonance spectra demonstrate the dimensionality of such s tructures and yield typical lateral confinement energies of 22.3 cm(-1 ) and electronic widths of similar to 900 nm. These estimates are supp orted by cathodoluminescence data. (C) 1996 American Institute of Phys ics.