RADIATIVE RECOMBINATION LIFETIME MEASUREMENTS OF INGAN SINGLE-QUANTUM-WELL

We present results from a time-resolved study of radiative recombinati on in ZnGaN quantum wells. The sample was grown by atmospheric pressur e metal-organic chemical-vapor deposition. Time-resolved photoluminesc ence measurements were performed from 7 K up to room temperature. The low temperature radiative lifetime was measured to be on the order of 250 ps at a generated carrier density of 10(12) cm(-2). The time-resol ved measurements show a bimolecular recombination characteristic. At 3 00 K, we observed a lifetime of 130 ps which, to the best of our knowl edge, is the longest lifetime reported for any III-V nitride at room t emperature. (C) 1996 American Institute of Physics.