EPITAXIAL-GROWTH OF (SR1-XCAX)CUO2 THIN-FILM WITH THE INFINITE-LAYER STRUCTURE BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Phase-pure epitaxial (Sr1-xCax)CuO2 thin films having the infinite-lay er crystal structure were grown on SrTiO3 (100) substrates by low pres sure metal-organic chemical vapor deposition using fluorinated metal-o rganic precursors. The substrate temperature and reactant gas (O-2, H2 O) partial pressure are crucial for stabilizing the tetragonal infinit e-layer structure. Films with compositions over the range x=0-0.3 can be stabilized. In-plane epitaxy was confirmed by x-ray diffraction phi scan. The films were semiconducting but exhibit resistivity anomalies . The orthorhombic phases of Sr2CuO3 and SrCuO2 were stabilized at 700 degrees C and 750 degrees C, respectively. (C) 1996 American Institut e of Physics.