LINEAR-COMBINATIONS OF CONSTITUENT STATES - A FIRST-PRINCIPLES LUTTINGER MODEL

We present a method where Luttinger-like parameters extracted from fir st-principles calculations on small prototype systems are used to calc ulate near-band-gap states of much larger semiconductor heterostructur es. The method can be used for small- and large-scale heterostructures with equal first-principles accuracy and it illustrates approximation s that are implicit in the Luttinger model. GaAs-AlAs(001) superlattic es are used to illustrate the method.